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Segmented Reactor Showerhead Design with Exhaust Gas Recirculation and Spatially-Resolved Sensing Capability for Chemical Vapor Deposition, Plasma-Enhanced CVD, and Plasma Etch Processes (ISR IP)
ISR intellectual property available to license
U.S. Patent: 6,821,910
Most conventional CVD systems do not have the spatial actuation and sensing capabilities necessary to control film uniformity or to intentionally induce non-uniform deposition patterns for single wafer combinatorial CVD experiments. To address these limitations, inventors at the University of Maryland, College Park, have built a multi-zone programmable CVD showerhead that generates highly controlled deposition conditions across the wafer, allowing a number of novel operating modes in single wafer processing and providing excellent quality control from wafer to wafer. The multi-zone showerhead features a reverse-flow design to improve gas composition spatial control; gas flow rates and compositions in each segment are independently controlled allowing the reactor system configuration to be reprogrammed completely within software. The device includes the capability to perform spatially resolved gas composition sampling for real time film quality control. In addition to CVD, plasma enhanced CVD and etch capabilities, applications of the programmable reactor design to combinatorial materials and process discovery and atomic layer deposition (ALD) processes are in development.
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June 18, 2007