Special Seminar: Tunable Transition Metal Oxides for Neuromorphic Computing
Wednesday, May 2, 2018
11:00 a.m.-12:00 p.m.
2201 Chemistry Building
301 405 9378
ASEE Postdoctoral Fellow, Residing at the U.S. Naval Research Laboratory, Washington, DC
Neuromorphic computing is an emerging computing paradigm designed to mimic the architecture and functionality of biological systems. As such, neuromorphic computing is particularly suited to artificial intelligence applications such as pattern recognition, decision making, and other fuzzy logic algorithms. Recent software progress has demonstrated the ability to mimic neuromorphic behavior using conventional CMOS hardware, however these types of computation are incredibly power-intensive, requiring massive centralized datacenters to operate. Dedicated neuromorphic hardware can potentially reduce the power required for a similar computational workload, however neuromorphic hardware development has lagged far behind software development.
The critical circuit component of neuromorphic hardware systems is the memristor, first experimentally realized by HP labs in 2008. The memristor is a resistor with a “memory” effect, such that the electrical resistance of the device is determined by the previous current passed through the device. Broadly, memristors can be categorized as one of two classes: volatile memristors that return to their default state once a stimulus is removed, and nonvolatile memristors that maintain their state for some characteristic time after the stimulus is removed.
In this talk, I discuss use of atomic layer deposition (ALD) for tunable memristor materials development. I discuss how ALD is uniquely suited to the development of both volatile and nonvolatile memristor materials including HfOx, NbOx, and VOx. Memristor materials stoichiometry and behavior is tuned using in-situ hydrogen reduction steps during the ALD process to form metastable oxides, digital doping of other elements to produce mixed oxide films, and post-deposition annealing to promote metastable phase crystallization.