NSF: Collaborative Research: Coding for Nano-Devices, Flash Memories, and VLSI Circuits

Specifically, the research carried out in this project can be roughly subdivided into the following four focus areas:

-- Development of new coding schemes for efficient addressing and correction of manufacturing defects in next-generation memory nano-devices, in particular the nano-wire crossbar.

-- Advanced coding techniques for high-density flash memories, based upon ground-breaking recent ideas of floating codes and rank-modulation coding.

-- Development of coding schemes to reduce power dissipation and to avoid cross-talk in VLSI circiuts, with particular emphasis on both on-chip and off-chip buses.

-- Applications to circuit design of the techniques developed in a range of well-known combinatorial problems in coding theory, including covering arrays, separating codes, intersecting codes, and qualitatively independent set families.

Collaborative Research: Coding for Nano-Devices, Flash Memories, and VLSI Circuits is a four-year, $300K grant.